Numerical simulation of current - voltage characteristics in a double barrier system 双势垒系统伏安特性的数值模拟
Photovoltaic devices - measurement of photovoltaic current - voltage characteristics 光电器件.第1部分:光电池电流.电压特性测量
Photovaltaic devices . part 1 : measurement of photovaltic current - voltage characteristics 光电设备.第1部分:光电电流电压特性的测量
Photovoltaic devices . part 1 : measurement of photovoltaic current - voltage characteristics 光伏器件第1部分:光伏电流电压特性的测量
Photovoltaic devices ; part 1 : measurement of photovoltaic current - voltage characteristics 光电器件.第1部分:光电池电流.电压性能的测定
Effect of structural parameters on current - voltage characteristics in a three - quantum - well superlattice unit 结构参数对三量子阱超晶格单元结构伏安特性的影响
Photovoltaic devices - part 1 : measurement of photovoltaic current - voltage characteristics iec 60904 - 1 : 1987 ; german version en 60904 - 1 : 1993 光电器件.第1部分:光电池电流-电压性能测量
High leakage currents and soft reverse current - voltage characteristics are some of the detrimental effects produced by the metal atoms dissolved in the silicon matrix . gettering procedures can reduce metal contamination 由于金属杂质原子扩散并沉积在器件的有源区,会造成诸如:反向漏电流较大,反向击穿电压是软击穿等有害的影响。
Standard test method for separating an ionizing radiation - induced mosfet threshold voltage shift into components due to oxide trapped holes and interface states using the subthreshold current - voltage characteristics 利用亚阈值安伏特性测定由于氧化空穴和界面态产生的电离辐射感应金属氧化物半导体场效应晶体管阈电压偏移分量的标准试验方法
Cd1 - xznxte single crystal with good crystallinity has been grown by the descending ampoule with rotation method - before this , high - purity cd1 - xznxte polycrystal materials have been synthesized from 6n gd zn te in the same ampoule . on the basis of this , we deeply explore method of detector fabrication . and we also studied the level and density of traps in detector . gold , indium and c have been deposited as electrodes on polished and chemically etched surfaces of samples with the sizes from 5 5 1 to 10 10 1 . 5mm to compare different contact technologies . the behavior of detector ' s leakage current with temperature and leakage current with time were studied as well as th current - voltage characteristics to deduce the level and density of trap in detectors 我们利用熔体温度振荡法在石英安瓿中将6n的单质cd 、 zn 、 te合成多晶原料,用坩锅旋转下降法在同一安瓿中生长出尺寸为20 40mm的cd _ ( 1 - x ) zn _ xte晶体。在此基础上对碲锌镉探测器的工艺进行了较深入的研究,制作了厚1 ? 1 . 5mm的探测器,测试了c 、 in 、 au等不同金属的电极接触性能,并在国内首次通过测试器件的i ? v 、 i ? t曲线、弛豫特性和电容特性对电阻率、陷阱能级、陷阱浓度进行了分析,同时测得的~ ( 241 ) am源的能谱。